Title
Design and modeling of p-i-n photodetectors using MEDICI
Abstract
Physical operation of p4-n photodetector has been studied. Photodiode current in the on and off states are presented. The small-signal conductance and junction capacitance versus light intensity are shown. The conductance decreases with intensity due to an increase of photocurrent. The junction capacitance is insensitive to illumination at low intensity and increases significantly at high intensity due to modulation of photogenerated mobile carriers.
Publication Date
5-2-1994
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
2149
Number of Pages
358-368
Document Type
Article; Proceedings Paper
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.175277
Copyright Status
Unknown
Socpus ID
85076211684 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/85076211684
STARS Citation
Yuan, J. S. and Lyons, J., "Design and modeling of p-i-n photodetectors using MEDICI" (1994). Scopus Export 1990s. 159.
https://stars.library.ucf.edu/scopus1990/159