Title

Thermal and reverse base current effects on heterojunction bipolar transistors and circuits

Abstract

Device modeling of the heterojunction bipolar transistor (HBT) has been examined. The Gummel-Poon model derived from silicon bipolar transistor is able to predict the base and collector currents of the HBT with good accuracy for negligible self-heating. The present model extends the Gummel-Poon model equations to account for self-heating using a nonlinear thermal resistance. The present model also accounts for base current reversal due to impact ionization in the collector-base depletion region. Effects of self-heating on the performance of analog circuits such as current mirrors and small-signal amplifiers are evaluated.

Publication Date

5-2-1994

Publication Title

Proceedings of SPIE - The International Society for Optical Engineering

Volume

2149

Number of Pages

137-147

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1117/12.175253

Socpus ID

85076201606 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85076201606

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