Title
Revisiting Structure Zone Models For Thin Film Growth
Abstract
More than 20 years ago Movchan and Demchishin published their structure zone model (SZM) of thin film morphology as a function of a single macroscopic parameter, the normalized substrate temperature. In all its simplicity, this model already reflects may experimental observations of thin film growth with surprising accuracy. Later modifications of the mode which included the influence of residual gas pressure and electrical bias potential in sputtering extended its validity of this family of deposition processes. Evolutionary features of thin film growth and the fractal nature of thin film structures were also discussed. None of these previous models, however, provided for a vitreous, fully dense structure as observed with some ion and plasma assisted deposition processes. In 1988, the author proposed an extension of the original Movchan-Demchishin SZM with a fourth zone reflecting the vitreous phase. In this paper, we will discuss the validity of this extension and generalize the 4-zone model.
Publication Date
1-1-1990
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
1324
Number of Pages
2-12
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1117/12.22411
Copyright Status
Unknown
Socpus ID
0025530153 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0025530153
STARS Citation
Guenther, Karl H., "Revisiting Structure Zone Models For Thin Film Growth" (1990). Scopus Export 1990s. 1622.
https://stars.library.ucf.edu/scopus1990/1622