Title

An Improved Junction Field-Effect Transistor Static Model For Integrated Circuit Simulation

Abstract

A physics-based Junction Field-Effect Transistor (JFET) static model for integrated circuit simulation is developed. The model covers unifyingly the behavior of the linear and saturation current regions without requiring fitting parameters. Subthreshold characteristics in the saturation region are also included in the model. Excellent agreement is obtained when the model is compared with experimental data measured from JFET's fabricated at Harris Semiconductor. © 1990 IEEE

Publication Date

1-1-1990

Publication Title

IEEE Transactions on Electron Devices

Volume

37

Issue

7

Number of Pages

1773-1775

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.55768

Socpus ID

0025464672 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025464672

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