Title
A Study Of Base Built-In Field Effects On The Steady-State Current Gain Of Heterojunction Bipolar Transistors
Abstract
This paper treats analytically the common-emitter d.c. current gain of heterojunction bipolar transistors with graded base for charge transport enhancement. Relevant device physics such as built-in electric field, current-induced base pushout, and drift velocity overshoot are accounted for in the model. Numerical simulations and measured dependencies published in the literature are included in support of the model. © 1990.
Publication Date
1-1-1990
Publication Title
Solid State Electronics
Volume
33
Issue
7
Number of Pages
845-849
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1016/0038-1101(90)90064-L
Copyright Status
Unknown
Socpus ID
0025458167 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0025458167
STARS Citation
Liou, J. J.; Wong, W. W.; and Yuan, J. S., "A Study Of Base Built-In Field Effects On The Steady-State Current Gain Of Heterojunction Bipolar Transistors" (1990). Scopus Export 1990s. 1641.
https://stars.library.ucf.edu/scopus1990/1641