Title

A Non-Quasi-Static Small-Signal Model For Metal-Semiconductor Junction Diodes

Abstract

The quasi-static approximation, which assumes that free-carrier propagation delay in the semiconductor device is zero, is often used in device modeling. Consequently, the quasi-static model is adequate only for low-frequency excitations for which free-carrier propagation delay is very small compared to the variation of the excitations. This paper develops a non-quasi-static model suitable for metal-semiconductor junction diodes subjected to small-signal excitation. We show that the predictions of the non-quasi-static model agree more favourably with experimental data taken from AlSi diodes than that of the quasi-static model, particularly when the frequency of the excitation is high. © 1990.

Publication Date

1-1-1990

Publication Title

Solid State Electronics

Volume

33

Issue

12

Number of Pages

1629-1632

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(90)90143-3

Socpus ID

0025628230 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025628230

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