Title

The Effects Of Neutron Irradiation On The Current Gain Of Algaas/Gaas Heterojunction Bipolar Transistors

Abstract

It is well known that radiative particles can degrade the performance of semiconductor devices. AlGaAs/GaAs heterojunction bipolar transistors (HBTs) show promising electrical performance and have the potential for substantial immunity to irradiation effects. A physics‐based model is presented suitable for predicting the dc current gain of a neutron‐irradiated AlGaAs/GaAs HBT. Important heterojunction device physics concerning free carrier transport and electron–hole recombination mechanism in the emitter–base heterojunction space‐charge layer is included. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

Publication Date

1-1-1990

Publication Title

physica status solidi (a)

Volume

119

Issue

1

Number of Pages

337-342

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssa.2211190139

Socpus ID

0025432627 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0025432627

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