Title

Femtosecond hybrid mode-locked semiconductor laser and amplifier dynamics

Keywords

42.55.Px; 42.65.-k

Abstract

We describe the generation of femtosecond high power optical pulses using hybrid passive-active mode-locking techniques. Angle stripe geometry GaAs/AlGaAs semiconductor laser amplifiers are employed in an external cavity including prisms and a stagger-tuned quantum-well saturable absorber. An identical amplifier also serves as an optical power amplifier in a stretched pulse amplification and recompression sequence. After amplification and pulse compression this laser system produces 200 fs, 160 W peak power pulses. We discuss and extend our theory, and supporting phenomenological models, of picosecond and subpicosecond optical pulse amplification in semiconductor laser amplifiers which has been successful in calculating measured spectra and time-resolved dynamics in our amplifiers. We have refined the theory to include a phenomenological model of spectral hole-burning for finite intraband thermalization time. Our calculations are consistent with an intra-band time of approximately 60 fs. This theory of large signal subpicosecond pulse amplification will be an essential tool for understanding the mode-locking dynamics of semiconductor lasers and for analysis of high speed multiple wave-length optical signal processing and transmission devices and systems based on semiconductor laser amplifiers. © 1994 Springer-Verlag.

Publication Date

3-1-1994

Publication Title

Applied Physics B Laser and Optics

Volume

58

Issue

3

Number of Pages

183-195

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1007/BF01081311

Socpus ID

0028398892 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028398892

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