Title

Double-Drift Avalanche Photodetectors

Abstract

A new avalanche photodiode device is proposed that has superior noise and bandwidth performance. This structure incorporates a drift region on both sides of the high field avalanche region. With the proper design, this reduces the capacitance by nearly a factor of two, without degrading the transit-time limited speed. In fact, it is shown that the double-drift structure can actually improve the intrinsic device speed. It is also shown that for high speed devices in which the layers must be kept thin, it can be advantageous to absorb light on both sides of the avalanche region, in spite of the consequent increase in the excess noise factor. © 1994 IEEE

Publication Date

1-1-1994

Publication Title

IEEE Transactions on Electron Devices

Volume

41

Issue

12

Number of Pages

2301-2304

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.337432

Socpus ID

0028733495 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028733495

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