Title

Thermal-Avalanche Interacting Behaviour Of Algaas Gaas Multi-Emitter Finger Heterojunction Bipolar Transistors

Keywords

AlGaAs GaAs HBT; avalanche; thermal

Abstract

A theoretical study on the heterojunction bipolar transistor (HBT) avalanche characteristics is presented, and an empirical model to describe the observed HBT behavior developed. It is found that using the impact ionization mechanism alone cannot fully explain the small-geometry HBT avalanche behaviour, and the thermal effect needs to be included due to the elevated temperature in such operation. The model compares favorably with experimental data measured from a 6-emitter finger HBT. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

9

Number of Pages

1645-1648

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(95)00051-T

Socpus ID

0029378245 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029378245

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