Title

High-Level Free-Carrier Injection In Advance Bipolar Junction Transistors (Invited)

Abstract

This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. It is shown that high-level injection can create a large retarding field which is in the opposite direction of the built-in field associated with the nonuniform doping concentration. High-level injection also enhances recombination in the QNB, thus resulting in a position-dependent minority-carrier current in the region even if the base is thin. Our results further suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.

Publication Date

12-1-1995

Publication Title

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

174-182

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0029493005 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029493005

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