Title
The Bipolar Junction Transistor In Saturation
Abstract
The analytical equations of collector and base currents and emitter—base and collector—base diffusion capacitances of the bipolar junction transistor in saturation have been reviewed and updated. Comparisons of three base profiles (uniform, exponential, and Gaussian) in terms of electron current density, transconductance, diffusion capacitance, and base transit time are presented. Copyright © 1995 WILEY‐VCH Verlag GmbH & Co. KGaA
Publication Date
1-1-1995
Publication Title
physica status solidi (a)
Volume
149
Issue
2
Number of Pages
757-769
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1002/pssa.2211490227
Copyright Status
Unknown
Socpus ID
0029318815 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029318815
STARS Citation
Yuan, J. S.; Dai, Y.; and Gu, Y., "The Bipolar Junction Transistor In Saturation" (1995). Scopus Export 1990s. 1841.
https://stars.library.ucf.edu/scopus1990/1841