Title

Analysis Of Abrupt And Linearly Graded Heterojunction Bipolar Transistors With Or Without A Setback Layer

Abstract

Analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including the self-heating effect are demonstrated.

Publication Date

8-1-1995

Publication Title

IEE Proceedings: Circuits, Devices and Systems

Volume

142

Issue

4

Number of Pages

254-262

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1049/ip-cds:19952030

Socpus ID

0029354601 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029354601

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