Title

Thermal And Reverse Base Current Effects On Heterojunction Bipolar Transistors And Circuits

Abstract

An empirical model of a heterojunction bipolar transistor is presented. The model expands the Gummel-Poon equations to account for device self-heating, base current reversal, and the collector-emitter offset voltage. It is shown that self-heating has implications for the cutoff frequency of the HBT for the frequency response of a small-signal amplifier, and also for the thermal stability of a current mirror circuit. © 1995 IEEE

Publication Date

1-1-1995

Publication Title

IEEE Transactions on Electron Devices

Volume

42

Issue

5

Number of Pages

789-794

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.381971

Socpus ID

0029307979 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029307979

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