Title
Modeling High-Level Free-Carrier Injection In Advanced Bipolar Junction Transistors
Abstract
This paper presents a comprehensive study on the effects of high-level free-carrier injection on the current transport of bipolar junction transistors (BJTs). Detailed information for the free-carrier concentration, electric field, and drift and diffusion current components in the quasi-neutral base (QNB) under high-level injection are calculated using the modified ambipolar transport equation and using several different approximations for the majority-carrier current in the QNB. Our results suggest that the widely used zero majority current approximation gives rise to a larger error compared to other lesser known approximations.
Publication Date
12-1-1995
Publication Title
International Conference on Solid-State and Integrated Circuit Technology Proceedings
Number of Pages
769-771
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029459617 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029459617
STARS Citation
Yue, Y.; Liou, J. J.; and Ortiz-Conde, A., "Modeling High-Level Free-Carrier Injection In Advanced Bipolar Junction Transistors" (1995). Scopus Export 1990s. 2141.
https://stars.library.ucf.edu/scopus1990/2141