Title
Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral
Keywords
Fermi-Dirac integral; Semiconductor free-carrier density
Abstract
We present the relative errors of the free-carrier concentration in a semiconductor at all temperatures associated with three different approximations for the Fermi-Dirac integral of the order of 1/2. The results suggest that the errors peak at around 200 K and decrease outside this temperature range for all three doping concentrations considered (1018, 1019, and 1020 cm-3). © 1995 IOP Publishing Ltd.
Publication Date
1-1-1995
Publication Title
Japanese Journal of Applied Physics
Volume
34
Issue
5R
Number of Pages
2286-2287
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1143/JJAP.34.2286
Copyright Status
Unknown
Socpus ID
0029305860 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029305860
STARS Citation
Yue, Yun; Liou, Juin J.; and Ortiz-Conde, Adelmo, "Relative Errors Of Free-Carrier Density At Different Temperatures Calculated From Approximations For The Fermi-Dirac Integral" (1995). Scopus Export 1990s. 1849.
https://stars.library.ucf.edu/scopus1990/1849