Title

Combined Effects Of Graded And Setback Layers On The Algaas Gaas Hbt Current-Voltage Characteristics

Abstract

The combined effects of graded and setback layers (WG and WI) on the AlGaAs GaAs heterojunction bipolar transistor (HBT) d.c. performance are investigated, and an anlaytical model which can describe the behavior of such HBTs is presented. The HBT base and collector currents accounting for the variation of the conduction and valence bands due to the presence of WG and WI are also calculated. It is shown that including WG and WI actually degrades the HBT current gain at low current levels. The current gain at high current levels, on the other hand, can be enhanced if WI = 150 A ̊ and 0 ≤ WG ≤ 300 A ̊ or WI = 0 and 150 A ̊ ≤ WG ≤ 300 A ̊ are used. The model predictions compare favorably with results calculated from a numerical model. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

3

Number of Pages

627-632

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)00158-C

Socpus ID

0029273417 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029273417

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