Title

Base transit time of submicron bipolar transistors including nonuniform base doping profile and high current effects

Abstract

An analytical TB model of submicron bipolar transistors valid for arbitrary levels of injection and Gaussian base doping profile is presented in this paper. For the devices considered, our calculations show that the conventional model (considers uniform base doping profile and no base pushout) overestimates τB by a factor of about 2.5 at low injection and underestimates τB by a factor of about 1.5 at high injection. Besides, τEC calculated from present model compares favorably with experimental data measured from a 0.12 μm base width BJT.

Publication Date

1-1-1994

Publication Title

1994 International Electron Devices and Materials Symposium, EDMS 1994

Document Type

Article; Proceedings Paper

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/EDMS.1994.771360

Socpus ID

85063583189 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/85063583189

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