Title

A Model-Based Comparison Of The Performance Of Algaas/Gaas And Si/Sige Heterojunction Bipolar Transistors (Hbts) Including Thermal Effects

Keywords

Device modeling; Heterojunction bipolar transistor

Abstract

The performances of AlGaAs/GaAs and Si/SiGe heterojunction bipolar transistors (HBTs) at room temperature are compared based on an analytical model which includes relevant physics such as the high-current and thermal (or self-heating) effects. Three figures of merit of the HBTs are calculated and compared: the dc current gain, cutoff frequency, and maximum oscillation frequency. Our results indicate that the AlGaAs/GaAs HBT possesses less uniform but higher peak current gain, cutoff frequency, and maximum oscillation frequency than its Si/SiGe counterpart. Furthermore, at high current densities, it has been shown that the thermal effect becomes important and degrades the performance of AlGaAs/GaAs HBT more significantly than that of Si/SiGe HBT due primarily to the poorer GaAs thermal conductivity than Si. © 1994 The Japan Society of Applied Physics.

Publication Date

1-1-1994

Publication Title

Japanese Journal of Applied Physics

Volume

33

Issue

7

Number of Pages

L990-L992

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1143/JJAP.33.L990

Socpus ID

0028461413 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028461413

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