Title
Numerical Analysis Of Direct Current And Transient Characteristics On N+-I-N+ Optically Activated Switches
Abstract
This paper presents simulation results for the dc and transient characteristics of the n+-i-n+ photoconductive diode at room and cryogenic temperatures fabricated in silicon and in silicon carbide. The simulation is carried out using a two-dimensional device simulator called MEDICI which can solve numerically the Poisson equation, electron and hole current equations, electron and hole continuity equations, as well as heat transfer equation. Relevant physical mechanisms, such as lattice heating, Fermi-Dirac statistics, high-field and doping-dependent free-carrier mobility, and various generation and recombination mechanisms are accounted for in the simulation.
Publication Date
1-1-1995
Publication Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
2343
Number of Pages
72-81
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029225193 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029225193
STARS Citation
Parthasarathy, Ashok; Liou, Juin J.; and Petr, Rodney A., "Numerical Analysis Of Direct Current And Transient Characteristics On N+-I-N+ Optically Activated Switches" (1995). Scopus Export 1990s. 1904.
https://stars.library.ucf.edu/scopus1990/1904