Title

Two-Dimensional Numerical Analysis For Extracting The Effective Channel Length Of Short-Channel Mosfets

Abstract

Device simulations are carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. It is shown that the conventional definition for the effective channel length using the locations of source/drain junctions is questionable. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed. © 1995.

Publication Date

1-1-1995

Publication Title

Solid State Electronics

Volume

38

Issue

6

Number of Pages

1155-1159

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)00231-4

Socpus ID

0004587304 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0004587304

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