Title

Model For Reverse Short-Channel Effects In Mosfets

Abstract

A model for reverse short-channel effects of the threshold voltage is presented by adding two separate n-regions around the source and drain regions of a p-channel MOSFET. Two-dimensional simulations with MEDICI of this modified p-channel MOSFET verifies this model. Experimental evidence of the reverse short-channel effects is also found. The errors inherent to the method for extracting the threshold voltage are shown not to be responsible for the reverse short-channel effects.

Publication Date

12-1-1995

Publication Title

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

294-297

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0029520509 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029520509

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