Title
Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters
Keywords
Diodes; Semiconductor device models
Abstract
A procedure is proposed to calculate both pre-exponential reverse currents of the double-exponential model of a diode's currentvoltage experimental characteristics from previously extracted reverse current and diode quality factor of the diode's singleexponential model. The procedure is illustrated by modelling the drain-body junction of a MOSFET including its parasitic series resistance. © 1995, IEE. All rights reserved.
Publication Date
1-5-1995
Publication Title
Electronics Letters
Volume
31
Issue
1
Number of Pages
71-72
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/el:19950030
Copyright Status
Unknown
Socpus ID
0029636108 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029636108
STARS Citation
Sanchez, F. J.Garcia; Ortiz-Conde, A.; and Liou, J. J., "Calculating Double-Exponential Diode Model Parameters From Previously Extracted Single-Exponential Model Parameters" (1995). Scopus Export 1990s. 2000.
https://stars.library.ucf.edu/scopus1990/2000