Title

Analysis Of Abrupt And Linearly-Graded Hbt'S With Or Without A Setback Layer

Abstract

Analytical current equations for abrupt and linearly-graded heterojunctions with or without a setback layer have been derived. The equations are general and applicable to both abrupt and linearly-graded heterojunction bipolar transistors. Collector and base currents and small-signal parameters such as transconductance and cutoff frequency of the abrupt and linearly-graded heterojunction bipolar transistors with or without a setback layer are evaluated. Comparisons between the isothermal model, the numerical model, and the present model including self-heating effect are demonstrated.

Publication Date

12-1-1995

Publication Title

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

212-216

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0029492437 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029492437

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