Title
Effective Channel Length Of Submicron Mosfets: Numerical Simulation, Physical Mechanisms, And Extraction Methods
Abstract
Device simulations are carried out to study the physical mechanisms underlying the effective channel length of MOSFETs. Furthermore, the adequacy of widely used methods for extracting such a parameter is examined using different free-carrier mobility models implemented in the device simulator. Based on the simulation results, a more consistent and accurate definition for determining the effective channel length is also proposed.
Publication Date
12-1-1995
Publication Title
International Conference on Solid-State and Integrated Circuit Technology Proceedings
Number of Pages
292-294
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029459612 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029459612
STARS Citation
Narayanan, R.; Ortiz-Conde, A.; and Liou, J. J., "Effective Channel Length Of Submicron Mosfets: Numerical Simulation, Physical Mechanisms, And Extraction Methods" (1995). Scopus Export 1990s. 2142.
https://stars.library.ucf.edu/scopus1990/2142