Title

Wet And Dry Etching Of Ligao2 And Lialo2

Abstract

LiGaO2 and LiAlO2 have similar lattice constants to GaN, and may prove useful as substrates for III-nitride epitaxy. We have found that these materials may be wet chemically etched in some acid solutions, including HF, at rates between 150 and 40,000 Å/min. Dry etching with SF6/Ar plasmas provides faster rates than Cl2/Ar or CH4/H2/Ar under electron cyclotron resonance conditions, indicating the fluoride etch products are more volatile that their chloride or metallorganic/hydride counterparts.

Publication Date

1-1-1996

Publication Title

Journal of the Electrochemical Society

Volume

143

Issue

8

Number of Pages

-

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1149/1.1837018

Socpus ID

0030215851 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030215851

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