Title
Study Of Algaas/Ingaas Pseudomorphic Hemt Using A Two-Dimensional Device Simulator
Abstract
The use of the two-dimensional device simulator MEDICI in conjunction with a heterojunction application module to examine the current-voltage, transconductance, and cutoff frequency of an AlGaAs/ InGaAs pseudomorphic HEMT is presented. The physical characteristics such as energy band diagram and potential and current contours are given and explained. The HEMT operated in the region of avalanche breakdown is also evaluated.
Publication Date
1-1-1996
Publication Title
Physica Status Solidi (A) Applied Research
Volume
153
Issue
2
Number of Pages
559-566
Document Type
Article
Personal Identifier
scopus
DOI Link
https://doi.org/10.1002/pssa.2211530232
Copyright Status
Unknown
Socpus ID
0030080509 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030080509
STARS Citation
Yuan, J. S., "Study Of Algaas/Ingaas Pseudomorphic Hemt Using A Two-Dimensional Device Simulator" (1996). Scopus Export 1990s. 2345.
https://stars.library.ucf.edu/scopus1990/2345