Title

Transient Analysis Of Bipolar Transistors Including Built-In Field And Recombination In Quasi-Neutral Base

Abstract

Transient analysis of bipolar transistors including built-in field and recombination in the base is derived. For the bipolar transistor switching from the salutation to cutoff, minority carriers in the neutral base are mainly removed through the collector terminal, especially for tbe BJT with large base grading. The charge partitioning between the emitter and collector is a strong function of the strength of aiding field and boundary conditions for switching.

Publication Date

1-1-1996

Publication Title

Physica Status Solidi (A) Applied Research

Volume

153

Issue

1

Number of Pages

287-297

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/pssa.2211530130

Socpus ID

0029771159 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0029771159

This document is currently not available here.

Share

COinS