Title
Scalable Bipolar Transistor Model Including Quasi-Saturation Effect For Bicmos Application
Abstract
A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epi-layer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement. Good agreement between the model predictions and experimental data has been obtained.
Publication Date
1-1-1996
Publication Title
Southcon Conference Record
Number of Pages
405-412
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0029699553 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0029699553
STARS Citation
Dai, Yong; Yuan, Jiann S.; and Song, Jiling, "Scalable Bipolar Transistor Model Including Quasi-Saturation Effect For Bicmos Application" (1996). Scopus Export 1990s. 2435.
https://stars.library.ucf.edu/scopus1990/2435