Title
Scalable bipolar model for BiCMOS and bipolar circuits
Abstract
A Gummel-Poon like bipolar transistor model including effects of quasi-saturation is derived. The model includes multi-dimensional effects such as sidewall injection, emitter current crowding, and collector current spreading. A current-dependent epilayer collector resistance is proposed to model collector conductivity modulation in quasi-saturation. The model has been compared with measurement and implemented in bipolar and BiCMOS circuits.
Publication Date
12-1-1996
Publication Title
Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems
Volume
2
Number of Pages
868-871
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0030368931 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030368931
STARS Citation
Dai, Y.; Yuan, J. S.; and Phanse, A. M., "Scalable bipolar model for BiCMOS and bipolar circuits" (1996). Scopus Export 1990s. 2627.
https://stars.library.ucf.edu/scopus1990/2627