Title
Effects of self-heating and thermal-coupling on the performance of AlGaAs/GaAs heterojunction bipolar transistors
Abstract
A numerical analysis is presented to investigate the effects of different base and collector structures on the dc and ac performance of AlGaAs/GaAs multi-finger heterojunction bipolar transistors (HBTs). The results show that different structures give rise to different electric fields in the base-collector junction and lattice temperatures in the HBT, which consequently affect the HBT's cutoff frequency and current gain, respectively. The physical mechanisms contributing to these differences are also discussed in detail.
Publication Date
12-1-1996
Publication Title
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Number of Pages
45-48
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0030379618 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030379618
STARS Citation
Liou, J. J. and Huang, C. I., "Effects of self-heating and thermal-coupling on the performance of AlGaAs/GaAs heterojunction bipolar transistors" (1996). Scopus Export 1990s. 2621.
https://stars.library.ucf.edu/scopus1990/2621