Title

AlGaAs/GaAs HBT current gain instability: Physical mechanism and SPICE simulation

Abstract

The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated, and a new AlGaAs/GaAs HBT model for SPICE circuit simulation is presented. Such a model includes the effects of base and collector leakage currents and the stress-induced abnormal base current, thus allowing the simulation of the performance of HBT circuits subjected to the electrical/thermal stress test (i.e., burn-in test).

Publication Date

12-1-1996

Publication Title

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Number of Pages

21-26

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0030419998 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0030419998

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