Title

Optimum Ge profile for base transit time minimization of SiGe HBT

Abstract

Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.

Publication Date

1-1-1997

Publication Title

Solid-State Electronics

Volume

41

Issue

12

Number of Pages

1957-1959

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(97)00129-9

Socpus ID

0031355722 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031355722

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