Optimum Ge profile for base transit time minimization of SiGe HBT

Creator

• J. Song, University of Central Florida
• J. S. Yuan, University of Central Florida

Abstract

Optimization of the trapezoidal Ge profile to minimize base transit time of the SiGe bipolar transistor was examined. A closed-form equation to find the optimum point of the trapezoidal Ge profile for base transit time minimization as a function of temperature is derived. Experimental data published in the literature are used to compare the model predictions with measurement.

Publication Date

1-1-1997

Publication Title

Solid-State Electronics

Volume

41

Issue

12

Number of Pages

1957-1959

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0038-1101(97)00129-9

Copyright Status

Unknown

Socpus ID

0031355722 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031355722

STARS Citation

Song, J. and Yuan, J. S., "Optimum Ge profile for base transit time minimization of SiGe HBT" (1997). Scopus Export 1990s. 2761.
https://stars.library.ucf.edu/scopus1990/2761