Title

Comments on "on the base profile design and optimization of epitaxial si- and sige-base bipolar technology for 77 k applications - part ii: circuit performance issues"

Abstract

The base transit time of the trapezoidal Ge base profile for the SiGe bipolar transistor has been evaluated. The analytical equations derived in the above paper1 result in significant error as the trapezoid profile is close to uniform Ge profile. In this work accurate analytical equations are derived. Comparisons between the present analytical predictions and previous published results are given. © 1997 IEEE.

Publication Date

12-1-1997

Publication Title

IEEE Transactions on Electron Devices

Volume

44

Issue

5

Number of Pages

915-917

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.568062

Socpus ID

0031145996 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031145996

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