Title
Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples
Abstract
Porous silicon samples were prepared by an electrochemical etching technique using various n-type and p-type silicon samples with different resistivities. Photoluminescence studies were performed on these porous silicon layers prepared from diamond scratched samples at room temperature. It is found that there is a redshift for these samples when compared to unscratched silicon samples.
Publication Date
1-1-1997
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Number of Pages
264-266
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0030650155 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0030650155
STARS Citation
Sundaram, K. B.; Blanchard, Jila; and Albin, S., "Photoluminescence spectrum redshifting of porous silicon layers prepared from diamond scratched silicon samples" (1997). Scopus Export 1990s. 2901.
https://stars.library.ucf.edu/scopus1990/2901