Title

Long-term current instability of AlGaAs/GaAs HBTs: An overview

Abstract

This paper provides an overview of the long-term current instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a major concern in HBT reliability. Topics covered include: 1) typical HBT post-bum-in characteristics, 2) physical mechanisms contributing to the HBT long-term current gain drift, 3) models for predicting the HBT mean time to failure (MTTF), and 4) non-typical HBT post-burn-in behavior and its physical insight.

Publication Date

12-1-1997

Publication Title

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Number of Pages

25-32

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0031343770 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031343770

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