Title
Extraction of the threshold voltage of MOSFETs: An overview
Abstract
The threshold voltage is a key parameter in the silicon MOSFET design and operation. This paper gives an overview of the existing methods for extracting the threshold voltage of MOSFETs. In addition, a new extraction method is proposed and developed. Comparisons of the results extracted from the various methods based on device simulation, circuit simulation, and measurements are also presented.
Publication Date
12-1-1997
Publication Title
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Number of Pages
31-38
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0031358395 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031358395
STARS Citation
Liou, J. J.; Ortiz-Conde, A.; and Garcia Sanchez, F., "Extraction of the threshold voltage of MOSFETs: An overview" (1997). Scopus Export 1990s. 3107.
https://stars.library.ucf.edu/scopus1990/3107