Title

A Semi-Numerical Model For Multi-Emitter Finger Algaas/Gaas Hbts

Abstract

A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model. © 1994.

Publication Date

1-1-1994

Publication Title

Solid State Electronics

Volume

37

Issue

11

Number of Pages

1825-1832

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(94)90173-2

Socpus ID

0028532909 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028532909

This document is currently not available here.

Share

COinS