Title
Semi-numerical model for power AlGaAs/GaAs HBTs including self-heating and thermal-coupling effects
Abstract
A semi-numerical model for the multiple-emitter finger heterojunction bipolar transistor (HBT) is presented. The model consists of an analytical model applicable for the single-finger HBT and a numerical program which solves the three-dimensional heat transfer equations. Experimentally observed thermally-limited I-V characteristics like the negative conductance and current crush phenomenon are accurately described by the model.
Publication Date
12-1-1994
Publication Title
PESC Record - IEEE Annual Power Electronics Specialists Conference
Volume
1
Number of Pages
463-469
Document Type
Article; Proceedings Paper
Identifier
scopus
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0028722353 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0028722353
STARS Citation
Kager, A.; Liou, J. J.; and Liou, L. L., "Semi-numerical model for power AlGaAs/GaAs HBTs including self-heating and thermal-coupling effects" (1994). Scopus Export 1990s. 60.
https://stars.library.ucf.edu/scopus1990/60