Title

Population inversion of Landau levels in the valence band of silicon in crossed electric and magnetic fields

Abstract

The Landau level structure of the degenerate valence band of silicon in crossed electric and magnetic fields (B = 5 T. E = 0 to 5 kVcm-1) has been calculated using the complete effective mass Hamiltonian for the three valence subbands. The calculations reveal a population inversion between light hole Landau levels at cryogenic temperatures due to a strongly level-dependent scattering on optical phonons, which is caused by quantum mechanical mixing of light and heavy hole states in crossed E and B fields. The possibility of amplification of far-infrared radiation on light hole cyclotron resonance transitions is discussed.

Publication Date

1-1-1998

Publication Title

Physica Status Solidi (B) Basic Research

Volume

205

Issue

2

Number of Pages

575-585

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/(SICI)1521-3951(199802)205:2<575::AID-PSSB575>3.0.CO;2-A

Socpus ID

0032345246 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032345246

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