Title

A scalable bipolar transistor model for circuit simulation

Abstract

A scalable bipolar transistor model for circuit simulation has been developed. The model accounts for two-dimensional effects such as emitter crowding and emitter-base sidewall injection. The model parameters are scalable and can predict the bipolar transistor parameters with different emitter widths and lengths. The scalable model is applicable for bipolar transistor at different temperatures.

Publication Date

1-1-1998

Publication Title

Physica Status Solidi (A) Applied Research

Volume

168

Issue

1

Number of Pages

209-222

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1002/(SICI)1521-396X(199807)168:1<209::AID-PSSA209>3.0.CO;2-P

Socpus ID

0032119032 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032119032

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