Title
Base-collector heterojunction barrier effect of the SiGe HBT at high current densities
Abstract
The conduction band barrier effect at high collector current densities of the SiGe heterojunction bipolar transistor has been modeled. The effects of conduction band discontinuity on the collector current and collector-base heterojunction capacitance are examined. Good agreement between the analytical model predictions and experiment is obtained.
Publication Date
1-1-1998
Publication Title
Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume
1998-August
Number of Pages
101-104
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
DOI Link
https://doi.org/10.1109/HKEDM.1998.740197
Copyright Status
Unknown
Socpus ID
33645743889 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/33645743889
STARS Citation
Yuan, J. S. and Song, J., "Base-collector heterojunction barrier effect of the SiGe HBT at high current densities" (1998). Scopus Export 1990s. 3218.
https://stars.library.ucf.edu/scopus1990/3218