Title

Long-term base current instability in AlGaAs/GaAs HBTs: Physical mechanisms, modeling, and SPICE simulation

Abstract

This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: (1) types of base current instability and their underlying physical mechanisms; (2) leakage currents in the HBT and their relevance to the reliability; (3) electrothermal interaction and their impact on the HBT reliability; (4) analytic model for predicting the HBTs mean time to failure (MTTF); and (5) SPICE implementation and simulation of HBT circuit reliability. Measurements and device simulation results are also included in support of the modeling and analysis. © 1998 Elsevier Science Ltd. All rights reserved.

Publication Date

1-1-1998

Publication Title

Microelectronics Reliability

Volume

38

Issue

5

Number of Pages

709-725

Document Type

Review

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(98)00026-2

Socpus ID

0032065103 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032065103

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