Title

Long-term base current instability: A major concern for AlGaAs/GaAs HBT reliability

Abstract

This paper provides an overview of the long-term base current instability in the AlGaAs/GaAs heterojunction bipolar transistor (HBT), which is a main mechanism governing the HBT long-term current gain drift and thus a major concern for the HBT reliability. Topics covered include: 1) types of base current instability and their underlying physical mechanisms; 2) leakage currents in the HBT and their relevance to the reliability; 3) electro-thermal interaction and their impact on the HBT reliability; and 4) analytic model for predicting the HBT mean time to failure (MTTF). Measurements and device simulation results are also included in support of the modeling and analysis.

Publication Date

12-1-1998

Publication Title

Proceedings of the International Semiconductor Conference, CAS

Volume

1

Number of Pages

23-32

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0032314873 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032314873

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