Title
Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors
Abstract
The excess electron barrier height at high current densities is examined. The barrier effects on the collector current, transconductance as well as base-collector junction capacitance are calculated. The analytical results are compared with the experimental data and device simulation results. Temperature-dependent characteristics are also evaluated.
Publication Date
1-1-1998
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Number of Pages
162-165
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0031702132 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031702132
STARS Citation
Song, Jiling and Yuan, J. S., "Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors" (1998). Scopus Export 1990s. 3396.
https://stars.library.ucf.edu/scopus1990/3396