Title
Comparison of on-resistance of a power MOSFET by varying temperature
Abstract
The development of the power MOSFET allows an electronic circuit designer greater flexibility in high power switching applications. This experiment demonstrates that the on-resistance of a power MOSFET decreases significantly when the operating temperature decreases. A comparison of on-resistance is then generated at 77 K, 173 K, 243 K and 295 K to show the effect of cryogenic cooling.
Publication Date
1-1-1998
Publication Title
Conference Proceedings - IEEE SOUTHEASTCON
Number of Pages
264-267
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0031653541 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0031653541
STARS Citation
Lu, W.; Mauriello, R. J.; and Sundaram, K. B., "Comparison of on-resistance of a power MOSFET by varying temperature" (1998). Scopus Export 1990s. 3431.
https://stars.library.ucf.edu/scopus1990/3431