Title

Temperature effect on power MOSFET devices

Abstract

The on-resistance of power MOSFET devices decreases with decreasing operating temperature, leading to a considerable reduction in heat generation inside the device. The thermal conductivity of the semiconductor material increases with decreasing temperature, significantly decreasing the internal thermal resistance of the MOSFET. This allows higher current to be pushed through the device with the same heat generation. When the MOSFET is operating under an extremely high power condition, although there are several effective cooling techniques to maintain the heat sink temperature within a certain range, the junction temperature can be kept at a reasonable temperature only if the internal thermal resistance is small.

Publication Date

12-1-1998

Publication Title

American Society of Mechanical Engineers, Advanced Energy Systems Division (Publication) AES

Volume

38

Number of Pages

467-473

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0032312776 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0032312776

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