Title

Reliability of AlGaAs/GaAs heterojunction bipolar transistors: an overview

Abstract

This paper provides an overview of issues related to the reliability of the increasingly popular and important AlGaAs/GaAs heterojunction bipolar transistor (HBT), which has been used widely in very-high speed applications such as cellular phones and microwave systems. Topics covered include: 1) typical HBT post-burn-in characteristics, 2) physical mechanisms contributing to the HBT long-term current gain drift, 3) models for predicting the HBT mean time to failure (MTTF), and 4) non-typical HBT post-burn-in behavior and its physical insight.

Publication Date

1-1-1998

Publication Title

Proceedings of the IEEE International Caracas Conference on Devices, Circuits and Systems, ICCDCS

Number of Pages

14-21

Document Type

Article; Proceedings Paper

Personal Identifier

scopus

Socpus ID

0031621605 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031621605

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