Title

A new approach for SPICE simulation of AlGaAs/GaAs HBT subjected to burn-in test

Abstract

A new approach for extracting the parameters of the Al-GaAs/GaAs heterojunction bipolar transistor (HBT) subjected to the electrical/thermal stress test (i.e., burn-in test) is presented. Such an approach is implemented into SPICE, thus allowing the simulations of the performance of post-burn-in HBT circuits. Steady-state, frequency, and transient responses of an HBT differential amplifier are simulated using the present HBT SPICE model. Results simulated from a two-dimensional (2-D) device simulator are also included in support of the model. © 1998 IEEE.

Publication Date

12-1-1998

Publication Title

IEEE Transactions on Electron Devices

Volume

45

Issue

1

Number of Pages

326-329

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.658849

Socpus ID

0012884816 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0012884816

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