Title

Numerical analysis on determining the physical mechanisms contributing to the abnormal base current in post-burn-in AlGaAs/GaAs HBTs

Abstract

An abnormal base current behavior with an ideality of about 3 is often observed in the AlGaAs/GaAs HBT after it is subjected to a high temperature/electrical burn-in condition. Using a two-dimensional device simulator, this paper studies and determines the main physical mechanisms contributing to such an abnormality. Data measured from two post-burn-in HBTs are included in support of the finding. © 1998 Published by Elsevier Science Ltd.

Publication Date

2-20-1998

Publication Title

Microelectronics Reliability

Volume

38

Issue

1

Number of Pages

163-170

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/S0026-2714(97)00071-1

Socpus ID

0031636590 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0031636590

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